摘要
In this paper, we investigated the effects of oxygen plasma treatment on tin oxide (SnO x ) thin film transistors (TFTs). By using oxygen plasma treatment on SnO x active channel layer, excess oxygen was incorporated to the channel layer and converted oxygen-deficient SnO x to oxygen-rich SnO 2-x , which in turn causes the device operation from p-type to n-type. Tuning the different exposure time of oxygen plasma, the optimal TFT device exhibits n-type properties with an on/off current ratio of 2.6 × 10 4 , a very high field-effect mobility of 89 cm 2 V -1 s −1 , and a threshold voltage of −0.95 V. Furthermore, the effects of oxygen plasma treatment on band structure, density of states and electron density difference of the SnO x channel layer were performed by the first-principles calculation using density functional theory. The results show that the oxygen plasma treatment approach has high potential for high-performance TFT applications.