Abstract
We applied laser annealing on indiumgallium-zinc oxide (IGZO) thin-film transistors (TFTs) to improve their electrical characteristics. The IGZO nanoparticles were prepared from a water solution, and the films were fabricated by the spin-coating method and postbaked at a low postbake temperature (95 °C). The crystallinity and compositions of the as-deposited film and the laser-annealed films were analyzed by X-ray diffraction. The film morphology and the electrical characteristics of TFTs at various irradiation dosages are also presented. Results show that the field-effect mobility can be improved to 7.65 cm 2 /V̇s. © 2010 IEEE.