Abstract
Metal gate with high work function is the key issue for MOS device. The influences of MoN metal gate with TiN layer above or below and various post metal annealing (PMA) treatments were studied in this work. Experimental results show that metal gate stack with TiN under MoN film (i.e., MoN/TiN sample) exhibits better electrical characteristics on gate leakage current, stress-induced flat-band voltage shift, and stress-induced leakage current and thermal stability despite a little lower work function. Thus MoN/TiN metal gate is promising for p-channel MOS device applications. © 2008 Elsevier Ltd. All rights reserved.