摘要
The growth behavior of Ba(Mg <sub>1/3</sub> Ta <sub>2/3</sub> )O <sub>3</sub> (BMT) thin films on bare or Pt-coated silicon substrates and their buffering effect on the subsequently deposited Pb(Zr,Ti)O <sub>3</sub> (PZT) films were systematically examined. The preferred orientation of BMT layer varies pronouncedly with the deposition parameters. It is (200) textured when deposited under high substrate temperature (400°C) or large laser fluence (3 J/cm <sup>2</sup> ). The BMT layer not only suppresses the film-to-substrate interdiffusion but also enhances the Pb(Zr <sub>1-x</sub> Ti <sub>x</sub> )O <sub>3</sub> (PZT) nucleation kinetics. The PZT films prepared on BMT layer by metal-organic-decomposition (MOD) process begin to crystallize at a substrate temperature as low as 400°C, which is lower than the reported heat treatment temperature for preparing PZT films via MOD process. However, postannealing at 550°C is required to fully crystallize the PZT films. The PZT/BMT/Pt(Si) thin films show high dielectric constant [(εr) <sub>PZT</sub> =400-425], low leakage current density (J <sub>e</sub> <2 × 10 <sup>-7</sup> A/cm <sup>2</sup> ), and good ferroelectric properties (P <sub>r</sub> = 15 μC/cm <sup>2</sup> , E <sub>c</sub> =157 kV/cm), while the PZT/BMT/Si thin films exhibit a large optical refractive index (n <sub>PZT/BMT/si</sub> =2.4). © 2004 American Institute of Physics.