Abstract
The ferroelectric (Pb,Sr) Ti O3 (PST) thin film with Zr O2 insulating buffer on Si and SiON (3 nm) Si substrates was fabricated by rf magnetron sputtering. Zr O2 demonstrates excellent insulating properties on either Si or SiONSi substrates. The metal-ferroelectric-insulator-semiconductor structure shows low leakage currents and exhibits clockwise capacitance-voltage hysteresis loops which are due to the ferroelectric polarization of the PST films. The maximum memory windows of the hysteresis loops are 0.8 and 1.37 V, respectively for PSTZr O2 films on Si and SiONSi substrates. This is of potential as memory devices. The charge injection effect under large sweeping voltages is discussed. © 2007 American Institute of Physics.