Abstract
We demonstrate an In053Ga0 As very shallow (80 'v 700 A) junction gate structure grown by molecular beam epitaxy (MBE). This structure allows the fabrication of submicron devices with simple processing steps. Study of the electrical characteristics suggests that this structure should be useful for both normally-on and normally-off field effect transistor (FET) applications. An FET structure utilizing this gate structure is also proposed. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.