Characterization and removal of residual defects in high dose, very low energy BF+ 2-implanted (001)Si

J.J. Yang; L.J. Chen

Journal article

Characterization and removal of residual defects in high dose, very low energy BF+ 2-implanted (001)Si

J.J. Yang and L.J. Chen

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol.121(1-4), pp.291-294

01/1997

Appears in keyword about Physics

Abstract

Residual defects in 5 keV, 5 × 10 ¹⁵ /cm ² BF ⁺ ₂ implanted (001)Si samples have been investigated by transmission electron microscopy. The residual defects were identified to be {113} interstitial defects, (001) defect clusters, fluorine bubbles and stacking faults. For the removal of the end-of-range (EOR) defects, the activation energy was determined to be 4.5 ± 0.4 eV. It is suggested that the free surface and fluorine bubbles act as effective vacancy sources to accelerate the removal of EOR defects.

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Title: Characterization and removal of residual defects in high dose, very low energy BF+ 2-implanted (001)Si
Creators - without role: J.J. Yang - Dept. of Mat. Sci. and Engineering , National Tsing Hua University
L.J. Chen - Dept. of Mat. Sci. and Engineering , National Tsing Hua University
Identifiers: 9957773867306774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article
Publication Details: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol.121(1-4), pp.291-294

Characterization and removal of residual defects in high dose, very low energy BF+ 2-implanted (001)Si

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