Abstract
We report the characterization of poly crystalline CdTe films grown on Si(111) by using UHV sublimination techniques. Films grown at substrate temperature below 250 °C exhibited streaked X-ray diffraction patterns. To understand the native oxide on the film surface, the films were exposed to a laboratory air environment in the growth chamber for several days. The XPS spectra were taken after each Ar-ion sputtering of these oxidized films. In order to obtain more information from the measured XPS data, we performed core-level line-shape analysis. Based on previously reported studies, CdTe, TeO 2 , and element Te are constituents in the film, while Cd is almost all in the CdTe state. Raman scattering from oxidized CdTe film in the frequency of 550-900 cm -1 reveals that TeO 2 is the predominant oxide. © 1998 THE PHYSICAL SOCIETY OF THE REPUBLIC OF CHINA.