Abstract
The characteristics of an as-deposited Ta/NiMn/Ni 80 Fe 20 /Cu/Ni 80 Fe 20 /Ta/SiO 2 spin valve (SV) thin film deposited on Si(100) using both polarized neutron reflectivity (PNR) and X-ray reflectivity (XRR) methods are invesigated in this study. In addition, the total magnetization of the film was measured using the vibrating sample magnetometer (VSM) method. The XRR method is applicable for the determination of the layer thickness and interface roughness in the Ta/NiMn capping layers as well as in the Ni 80 Fe 20 /Ta buffer layers. The layer thickness, interface roughness, and magnetic moments in both the top Ni 80 Fe 20 pinned and bottom Ni 80 Fe 20 free layers are probed using the PNR method. The results revealed that the magnetic moments in the top Ni 80 Fe 20 pinned and bottom Ni 80 Fe 20 free layers were, respectively,-0.2 ± 0.05 μ B and 0.9 ± 0.05 μ B under an available minimum magnetic field of 50 Oe. Furthermore, the total magnetizations obtained by the PNR and VSM methods are in good agreement. © 2006 The Physical Society of the Republic of China.