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Characterization of sub-THz photonic-transmitters based on GaAs-AlGaAs uni-traveling-carrier photodiodes and substrate-removed broadband antennas for impulse-radio communication
Journal article

Characterization of sub-THz photonic-transmitters based on GaAs-AlGaAs uni-traveling-carrier photodiodes and substrate-removed broadband antennas for impulse-radio communication

Yu-Tai Li, J.-W. Shi, Cheng-Yu Huang, Nen-Wei Chen, Shu-Han Chen, J.-I. Chyi and Ci-Ling Pan
IEEE Photonics Technology Letters, Vol.20(16), pp.1342-1344
15/08/2008

Abstract

Photonic transmitter (PT) Submillimeter-wave Terahertz (THz) Uni-traveling-carrier photodiode (UTC-PD)
A novel photonic transmitter for wireless terahertz (THz) impulse-radio (IR) communication is realized by monolithic integration of a GaAs-AlGaAs-based uni-traveling-carrier (UTC) photodiode with a substrate-removed broadband antenna. The device can radiate strong sub-THz pulses (20-mW peak-power) with a narrow pulsewidth (<2 ps) and wide bandwidth (100 ∼ 250 GHz). The maximum average power emitted by our device, under the same THz time-domain spectroscopic setup, is around ten times higher than that of the low-temperature-grown GaAs-based photoconductive antenna, while with a much lower dc bias (9 versus 35 V). The bias-dependent peak output powers of our devices suggest their suitability for application as a data modulator/emitter for photonic THz IR communication. © 2008 IEEE.

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