摘要
In this study, the characteristics of ion-sensitive field-effect transistors (ISFETs) with silicon wire array channels and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO 2 were investigated. Si wires were fabricated by nanoimprint lithography and Si anisotropic/isotropic reactive-ion etching processes. The Si wires, with a line width of ∼200 nm, were undercut and nearly suspended, which formed an ω-shape cross-section. The aspects of wires were investigated using an optical microscope, an atomic force microscope, a scanning electron microscope, and a transmission electron microscope. The sensitivity, hysteresis, and drift of ISFETs were investigated. The above sensing properties were all significantly improved with the proposed channels and the sensing membrane stacks. As such, high-performance ISFETs can be realized for future biochemical applications. " 2022 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited. [DOI: 10.1149/1945-7111/ac5ad9].