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Charge-based capacitance measurement for bias-dependent capacitance
Journal article   Peer reviewed

Charge-based capacitance measurement for bias-dependent capacitance

Yao-Wen Chang, Hsing-Wen Chang, Tao-Cheng Lu, Ya-Chin King, Wenchi Ting, Yen-Hui Joseph Ku and Chih-Yuan Lu
IEEE Electron Device Letters, Vol.27(5), pp.390-392
05/2006
DOI: https://doi.org/10.1109/LED.2006.873368

Abstract

Capacitance measurement Charge based Charge-based capacitance measurement (CBCM) Effective channel length MOSFET capacitor
In this letter, charge-based capacitance measurement (CBCM) is applied to characterize bias-dependent capacitances in a CMOS transistor. Due to its special advantage of being free from the errors induced by charge injection, the operation of charge-injection-induced-error-free CBCM allows for the extraction of full-range gate capacitance from the accumulation region to the inversion region and the overlap capacitance of MOSFET devices with submicrometer dimensions. © 2006 IEEE.

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