Abstract
AlSiCu films deposited on substrates of Si, borophosphate silicate glass and TiW with improved electrical properties (lower sheet resistance) and reliability (higher Al[111] diffraction intensity) obtained by the proposed metallization process are described. A chemometric approach of unifying the experimental design, analysis of variance and regression analysis is shown to be an effective and efficient means of fine tuning this metallization process. Statistical results from the analysis of variance and regression analysis are helpful in validating each other. The optimum deposition conditions are dependent on both the film quality and substrate identity. The variations are attributed to the different interfacial properties. © 1992.