Clarifying the switching layer transformation through analysis of an abnormal I-V curves with increasing set compliance current in oxide-based resistive random access memory

S.-K. Lin; T.-C. Chang; C.-H. Lien; C.-H. Wu; Y.-L. Xu; C.-C. Yang; W.-C. Huang; P.-Y. Wu; Y.-C. Zhang; S.-Y. Chou; H.-C. Huang; K.-Y. Wang; S.M. Sze

doi:10.35848/1882-0786/ac200c

期刊文章

Clarifying the switching layer transformation through analysis of an abnormal I-V curves with increasing set compliance current in oxide-based resistive random access memory

S.-K. Lin, T.-C. Chang, C.-H. Lien, C.-H. Wu, Y.-L. Xu, C.-C. Yang, W.-C. Huang, P.-Y. Wu, Y.-C. Zhang, S.-Y. Chou, …

Applied Physics Express, 卷.14(9)

2021

DOI: https://doi.org/10.35848/1882-0786/ac200c

Web of Science ID: WOS:000692010400001

摘要

Electric fields

Abnormal phenomenon

Compliance current

Current fitting

Electric field simulation

High-resistance state

Layer transformation

Lower voltages

Resistive random access memory

Random access storage

This work investigates an abnormal rising current in high resistance state (HRS) during the reset process that occurs when increasing the sweeping set compliance current (SCC). When the SCC is increased, the HRS current read at a lower voltage (-0.1 V) remains similar, yet exhibits a gradual rise when read at a higher voltage (-0.8 V). In order to clarify this abnormal phenomenon, the current fittings were performed to obtain the corresponding switching layer (SL) properties after set operations with different SCCs. Furthermore, COMSOL electric field simulations with different SL properties were executed to verify the mechanism. © 2021 The Japan Society of Applied Physics.

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合作類型: 機構合作
引用書目主題: 5 Physics; 5.310 Resistive Switching; 5.310.1164 Resistive Switching
Web Of Science研究領域: Physics, Applied
ESI研究領域: Physics

詳細資料

題名: Clarifying the switching layer transformation through analysis of an abnormal I-V curves with increasing set compliance current in oxide-based resistive random access memory
創作者：: S.-K. Lin - National Tsing Hua University
T.-C. Chang - National Sun Yat-sen University
C.-H. Lien - National Tsing Hua University
C.-H. Wu - National Sun Yat-sen University
Y.-L. Xu - National Sun Yat-sen University
C.-C. Yang - National Sun Yat-sen University
W.-C. Huang - National Sun Yat-sen University
P.-Y. Wu - National Sun Yat-sen University
Y.-C. Zhang - National Sun Yat-sen University
S.-Y. Chou - National Sun Yat-sen University
H.-C. Huang - National Sun Yat-sen University
K.-Y. Wang - National Sun Yat-sen University
S.M. Sze - National Yang Ming Chiao Tung University
出版者: IOP Publishing Ltd; BRISTOL
總頁數: 6
補助款備註: Ministry of Science and Technology, Taiwan: MOST-109-2112-M-110-015-MY3, MOST-109-2221-E-009-019-MY2
This work was performed at Ministry of Science and Technology Core Facilities Laboratory for Nano-Science and Nano-Technology in Kaohsiung-Pingtung area and Taiwan Semiconductor Research Institute. The authors are grateful to the technical supports from the focus ion beam (FIB) engineer Mr. Yan-Wen Chen in the Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University. This work was also supported by the Ministry of Science and Technology, Taiwan under Contract No. MOST-109-2112-M-110-015-MY3 and MOST-109-2221-E-009-019-MY2.
學術資源類型: 期刊文章
出版日期: 2021
出版資訊: Applied Physics Express, 卷.14(9)
語言: 英語

Clarifying the switching layer transformation through analysis of an abnormal I-V curves with increasing set compliance current in oxide-based resistive random access memory

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