摘要
Coaxial metal-oxide-semiconductor (MOS) Au-Ga 2 O 3 -GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga 2 O 3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO 2 substrate at 800 °C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 °C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices. © 2008 American Chemical Society.