摘要
This study reports the synthesis and characterization of nonstoichiometric nanocrystalline Co 2.59 W 0.41 O 4 thin film by the radio frequency (RF)-sputter technique suitable for photosensor applications. The photoconductive characteristics of Co 2.59 W 0.41 O 4 thin film are investigated by fabricating a sandwich-structure device of p + Si/Co 2.59 W 0.41 O 4 thin film/indium tin oxide with Schottky barriers. The device characteristics including responsivity, light intensity response, and time response are studied. It is found that Co 2.59 W 0.41 O 4 thin film exhibits good absorption (absorption coefficient ≈10 4 cm -1 in visible light spectrum), relatively high responsivity (R res = 5.427 A W -1 ), and fast photoresponse time including rise time (t r ) = 81.04 ms and fall time (t f ) = 80.67 ms. Hence, the Co 2.59 W 0.41 O 4 thin film is favorable for potential photosensor applications.