Abstract
The mechanism of coherently induced ferromagnetism in diluted magnetic semiconductors was investigated. The magnetic semiconductor, which was exposed to a laser below absorption threshold, was found to undergo a ferromagnetic phase transition at low temperatures. It was observed that the mechanism, which was between conduction and valence bands, was induced by the light that lead to an optical exchange interactions. It was also observed that the ferromagnetic critical temperature was depended both on the frequency and intensity of the laser and on the properties of the material.