摘要
The effects of surface alteration on CuInSe2 thin films by KCN etching and subsequent (NH4)2Sxsulfur passivation as well as the formation of higher bandgap CuIn(S,Se)2 layer were investigated. After these chemical treatments, no oxygen uptake was observed and a significant number of sulfur atoms were found to diffuse into the Sb-incoporated CuInSe2 thin films to form a stable and higher bandgap CuIn(S,Se)2 layer. A model is proposed to explain how Sb atoms in CuInSe2 thin films can create a pathway for fast replacement of Se by S atoms. Also, Cu segregation from Cu-rich CuInSe2thin films was directly verified for the first time by the experiments of angular dependence of x-ray fluorescence.