Abstract
Transmission electron microscopy (TEM) has been applied to study compensation-like effects in BF 2 + + As + and BF 2 + + P + double implants in silicon. For both BF 2 + +As + and BF 2 + + P + double implant samples, with BF 2 + implanted to a dose of 5 × 10 15 /cm 2 , the fluences of As + or P + were ranged from 1 × 10 14 to 5 × 10 15 /cm 2 . The solid phase epitaxial growth (SPEG) rate was found to decrease with increasing dose of n-type dopants. The results revealed a strong compensation-like effect on the SPEG in both systems. In both BF 2 + +As + and BF 2 + +P + double implant samples, the density of residual defects was found to decrease with increasing dose of n type dopant. As + was found to be more effective than P + in alleviating defect formation in double implant samples. The results are compared with those in BF 2 + , As + and P + single implant samples. © 1989.