Abstract
Thin film transistors (TFTs) of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) were fabricated on SiO 2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In 2 O 3 films were polycrystalline in nature with preferred (222) orientation and SnO 2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO 2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn 2+ and Sn 4+ . While the In 2 O 3 based TFTs possess n-type channel conduction, SnO 2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11. © 2008 American Institute of Physics.