摘要
Neutron reflectivity (NR) and X-ray reflectivity (XR) have been measured for a silicon-gel-derived porous thin film, deposited on an oxide silicon wafer. The complementary NR and XR data provide a better determination of the film structure. With the two critical wavevectors for total reflection of neutrons and X-rays measured for the film, we have extracted the hydrogen content of the film. We have also discussed the strategy of using XR NR as a contrast to study the three-phase porous thin films. © 2006 Elsevier B.V. All rights reserved.