Abstract
A diamond-like carbon (DLC) and silicon carbide (SiC) composite tip structure was successfully deposited on an oblique-cut Si(111) substrate of terrace width less than 21.1 Å. The DLC morphology depended on the Si(111) terrace width in the oblique-cut Si(111) surface. A continuous and dense DLC film started to form on the Si(111) substrate of terrace width higher than 27.8 Å. The density of the DLC/SiC composite tip also depended on the terrace width. The DLC films on the Si(111) with or without oblique cut had about the same Raman characteristics regardless of their different morphologies. The formation mechanism of the DLC/SiC tip structure was discussed. © 2001 American Institute of Physics.