- Title
- Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance
- Creators - without role
- 永俊 吳
- Identifiers
- 9957776238306774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
- Publication Details
- ECS Journal of Solid State Science and Technology
Journal article
Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance
ECS Journal of Solid State Science and Technology
2021
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