摘要
This study reports the ferroelectric (FE) layer of Hf0.5Zr0.5O2 (HZO) film on a Ge gate-all-around field-effect-transistor (GAAFET) with inversion mode (IM) and junctionless (JL) mode, and is the first that discuss the association of the JL field-effect transistor conduction mechanism in the subthreshold region with the transient negative capacitance (TNC) effect of the FE layer are discussed. The IM Ge FE-GAAFET exhibited a minimum subthreshold slope (SSmin) of 55 mV dec(-1) and a high I-ON/I-OFF ratio of >10(6). The sub-60 mV dec(-1) SS result demonstrates surface potential amplification, which is attributed to the TNC effect. Furthermore, the Ge JL FE-GAAFETs exhibited an SSmin of 58 mV dec(-1), a high I-ON/I-OFF ratio (>10(5)), and reverse drain-induced barrier lowering when compared with baseline HfO2 devices. These IM and JL Ge FE-GAAFETs are highly suitable for low-power integrated circuit applications.