Abstract
This paper develops the n-channel and p-channel twin poly-Si fin field-effect transistor nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results demonstrate that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.6 V after 10 4 program and erase cycles, and after 10 years, the charge is 53.4% of its initial value. In the future, it can be applied in multilayer Si ICs in fully functional system-on-panel, active-matrix liquid-crystal display and 3-D stacked flash memory. © 2002-2012 IEEE.