Abstract
Here we show that gas-phase doping by means of NH 3 plasma exposure is a highly flexible and manufacturable process for graphene electronics. The nitrogen-containing radicals can readily form covalent bonds with the carbon lattice and keep stable in the postannealing for damage restoration. The amount of charge transfer can be fine tuned by controlling the exposure time and monitored by the systematic shift in the Raman G mode and the G ds - V g curves in transport measurements. The maximum doping level can reach 1.5× 10 13 cm -2 . © 2010 American Institute of Physics.