Copper electroplating for future ultralarge scale integration interconnection

W.C. Gau; T.C. Chang; Y.S. Lin; J.C. Hu; L.J. Chen; C.Y. Chang; C.L. Cheng

doi:10.1116/1.582243

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Copper electroplating for future ultralarge scale integration interconnection

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Copper electroplating for future ultralarge scale integration interconnection

W.C. Gau, T.C. Chang, Y.S. Lin, J.C. Hu, L.J. Chen, C.Y. Chang and C.L. Cheng

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.18(2), pp.656-660

03/2000

DOI: https://doi.org/10.1116/1.582243

Abstract

The mechanisms of Cu electroplating were studied. It was found that film morphology and film resistivity are dependent on electrolyte concentrations and applied current density. Using a novel chemical additive of hydroxyl amine sulfate as a gap filling promoter, Cu electroplating without void formation was possible.

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Title: Copper electroplating for future ultralarge scale integration interconnection
Creators - without role: W.C. Gau - Chung Yuan Christian University
T.C. Chang - National Sun Yat-sen University
Y.S. Lin - Chung Yuan Christian University
J.C. Hu - National Tsing Hua University
L.J. Chen - National Tsing Hua University
C.Y. Chang - National Yang Ming Chiao Tung University
C.L. Cheng - Department of Chemical Engineering , Chung-Yuan University
Publication Details: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.18(2), pp.656-660
Identifiers: 9957771752206774
Academic Unit: Department of Materials Science and Engineering, College of Engineering, National Tsing Hua University
Language: English
Resource Type: Journal article

Copper electroplating for future ultralarge scale integration interconnection

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