Correction to: Exciton localization of high-quality ZnO/MgxZn1- xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer (ACS Applied Nano Materials (2018) 1:8 (3829-3836) DOI: 10.1021/acsanm.8b00595)

期刊文章

Wei-Rein Liu, Wei-Lun Huang, Yung-Chi Wu, Liang-Hsun Lai, Chia-Hung Hsu, Wen-Feng Hsieh, Tsung-Hung Chiang, H.W. Wan, M. Hong 和 J. Kwo

ACS Applied Nano Materials, 卷.1(10), 頁.5958

10/2018

摘要

Materials Science (all)

Page 3829 and S-1 in Supporting Information. In the author list, the last coauthor's name should be "J. Kwo" instead of "J. Kao".

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題名: Correction to: Exciton localization of high-quality ZnO/MgxZn1- xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer (ACS Applied Nano Materials (2018) 1:8 (3829-3836) DOI: 10.1021/acsanm.8b00595)
翻譯題名: Correction to: Exciton localization of high-quality ZnO/MgxZn1- xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer (ACS Applied Nano Materials (2018) 1:8 (3829-3836) DOI: 10.1021/acsanm.8b00595)
創作者：: Wei-Rein Liu (作者)
Wei-Lun Huang (作者)
Yung-Chi Wu (作者)
Liang-Hsun Lai (作者)
Chia-Hung Hsu (作者)
Wen-Feng Hsieh (作者)
Tsung-Hung Chiang (作者)
H.W. Wan (作者)
M. Hong (作者)
J. Kwo (作者)
學術資源類型: 期刊文章
出版日期: 10/2018
出版資訊: ACS Applied Nano Materials, 卷.1(10), 頁.5958
語言: 英語