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Correlation between quantized electronic states and oscillatory thickness relaxations of 2D Pb islands on Si(111)-(7 × 7) surfaces
Journal article   Peer reviewed

Correlation between quantized electronic states and oscillatory thickness relaxations of 2D Pb islands on Si(111)-(7 × 7) surfaces

W.B. Su, S.H. Chang, W.B. Jian, C.S. Chang, L.J. Chen and T.T. Tsong
Physical Review Letters, Vol.86(22), pp.5116-5119
28/05/2001

Abstract

The physical properties of 2D Pb islands grown on Si(111) surfaces at low temperature were studied. The quantized electronic states resulted from the finite thickness normal to the surface set off surface charge variation and structural relaxation of the island, and their correlation is clearly demonstrated with definitive assignment of the quantum numbers.

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