摘要
A complete description for advanced critical dimension (CD) analysis is given. It is shown that a PEB hotplate with more accurate temperature control is the most economical way to save CD budget for 193 nm photolithography.
- 題名
- Critical dimension error analysis for 0.13 μm photolithography and beyond
- 翻譯題名
- Critical dimension error analysis for 0.13 μm photolithography and beyond
- 創作者：
- Tsai-Sheng Gau (作者) - Taiwan Semiconductor Manufacturing Company (China)Anthony Yen (作者) - Taiwan Semiconductor Manufacturing Company (China)Jeng-Horng Chen (作者) - Taiwan Semiconductor Manufacturing Company (China)Shinn-Sheng Yu (作者) - Taiwan Semiconductor Manufacturing Company (China)Chun-Kuang Chen (作者) - Taiwan Semiconductor Manufacturing Company (China)Chih-Ming Ke (作者) - Taiwan Semiconductor Manufacturing Company (China)Burn J. Lin (作者) - Taiwan Semiconductor Manufacturing Company (China)Ping-Ting C. Wang (作者) - Taiwan Semiconductor Manufacturing Company , SBIP
- 學術資源類型
- 期刊文章
- 出版日期
- 11/2001
- 出版資訊
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 卷.19(6), 頁碼.2884-2889
- 語言
- 英語