Abstract
A combined cross-sectional and plain-view transmission electron microscope study of residual defects in 110-keV 5×10 15 /cm 2 BF + 2 -implanted (111) Si has been carried out. The samples were annealed isothermally in N 2 ambient at 600-1100 °C with 100 °C increments. The distribution, density, and size of point defect clusters, twins, equiaxial loops, elongated loops, and bubbles were analyzed in detail. The origin and evolution of the residual defects are discussed.