摘要
We present a method of ozonation to form the rear-side passivation layers of crystalline silicon PERC cells. In the method, a thin aluminum film was deposited on the back surface of a silicon wafer and then was oxidized into an aluminum oxide layer by gaseous ozone. Lifetimes of the wafers with such passivation layers proved to be increased with respect to those untreated, and the resultant PERC cells showed a performance improvement compared with standard cells with full back surface fields.