摘要
Crystalline silicon film is extremely important for low-cost, high performance Si-based devices, such as thin film transistors and solar cells. This study employs an elliptical microwave applicator to process the material placing near the field maximum. It is demonstrated that microwave irradiation incorporating with SiC susceptors is able to crystallize amorphous silicon film on glass substrate at a low temperature below 600 °C in a short period of 600 s. The reasons for such a fast processing time and a low annealing temperature are not clear.