摘要
Results on both field driven and current induced domain wall motion in Co/Cu/ Ni80 Fe20 trilayered half-ring in-series wires with different linewidths were presented. The switching behavior depends linearly on the linewidth of Co/Cu/ Ni80 Fe20 trilayered half-ring structures. A larger bias field (Hb) applied to the samples results in a smaller critical current needed to reverse magnetization. The critical current density was observed to be 3× 107 A/ cm2 for Ni80 Fe20 and 2× 108 A/ cm2 for Co at zero field. The results of the numbers of giant magnetoresistance jump (digital) versus external magnetic field and current densities (analog) of this design have potential utility as an analog-digital converter. © 2009 American Institute of Physics.