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Data on the early oxidation of SiO2-coated pure Ti and bulk Ti5Si3 at 800 °C
期刊文章

Data on the early oxidation of SiO2-coated pure Ti and bulk Ti5Si3 at 800 °C

K. Chou, P.-W. Chu 和 E.A. Marquis
Data in Brief, 卷.20, 頁碼.1263-1268
2018
Web of Science ID: WOS:000450242200189

摘要

Energy dispersive spectroscopy High resolution transmission electron microscopy Oxidation Scanning electron microscopy Titanium Coated titanium Common datum Data repositories Electrons energy Oxidation behaviours Scanning transmission electron microscopy Silica
Oxidation of pure Ti sputtered with a 250 nm layer of amorphous SiO2 and bulk Ti5Si3 was conducted at 800 °C for 2 or 32 h in a 1 standard cubic centimeter per minute (SCCM) O2/4 SCCM Ar environment (approximately pO2 = 0.2 atm/20.3 kPa). Specimens were characterized using transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive spectroscopy. The data in this article accompanies research article “Early oxidation behavior of Si-coated titanium” [1], which contains further discussion. The data for this article is hosted at the Materials Commons data repository and is available for download at https://materialscommons.org/mcapp/#/data/dataset/b8bc8038-a735-4cb9-9a9e-a0fb912b248c. © 2018 The Authors

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85053426413&doi=10.1016%2fj.dib.2018.08.173&partnerID=40&md5=9e238df3bf3c5045f4d07096e20b7152檢視
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https://doi.org/10.1016/j.dib.2018.08.173檢視
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