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Defect reduction with special routing for immersion lithography
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Defect reduction with special routing for immersion lithography

Fu-Jye Liang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng GauBurn J. Lin
Journal of Micro/Nanolithography, MEMS, and MOEMS, 卷.6(1), 010501
2007

摘要

Defect Immersion Lithography Special routing Electronic Optical and Magnetic Materials Atomic and Molecular Physics and Optics Condensed Matter Physics Mechanical Engineering Electrical and Electronic Engineering
This letter reports record-breaking low defect counts for immersion lithography, the mechanism for formation of particle-printing defects, and for two new exposure routings to achieve the low defect counts. Both new routings make the slot-scan directions parallel to the field-stepping directions, whereas in the normal routing the two directions are perpendicular to each other. From experimental data, the average defect count for one of the special routings is 4.8 per wafer, while it is 19.7 per wafer for normal routing. © 2007 Society of Photo-Optical Instrumentation Engineers.

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https://doi.org/10.1117/1.2718941檢視
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