摘要
The microstructure of semipolar(112̄2̄) ZnO deposited on (112) LaAlO 3/ (La,Sr)(Al,Ta)O 3 was investigated by transmission electron microscopy. The ZnO shows an in-plane epitaxial relationship of [112̄3]ZnO k [111̄]LAO=LSAT with oxygen-face sense polarity. The misfit strain along [112̄3]ZnO and [1100̄]ZnO is relieved through the formation of misfit dislocations with the Burgers vectors b 1=6/1;112̄3]ZnO and b 1=3/1〈1210〉ZnO, respectively. The line defects in the semipolar ZnO are predominantly perfect dislocations, and the dislocation density decreases with increasing ZnO thickness as a result of dislocation reactions. Planar defects were observed to lie in the M-plane and extend along 〈0001〉, whereas basal stacking faults were rarely found. © 2013 IOP Publishing Ltd.