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Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator
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Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator

Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, …
Advanced Intelligent Systems, 卷.5(6), 2200389
06/2023

摘要

convolutional neural network (CNN) ferroelectric field-effect transistor (FeFET) in-memory computing (IMC) nonvolatile memory (NVM) Artificial Intelligence Computer Vision and Pattern Recognition Human-Computer Interaction Mechanical Engineering Control and Systems Engineering Electrical and Electronic Engineering Materials Science (miscellaneous)
Harnessing multibit precision in nonvolatile memory (NVM)-based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM-based synaptic cores suffer from the trade-off between bit density and performance. The undesired performance degradation with scaling, limited bit precision, and asymmetry associated with weight update poses a severe bottleneck in realizing a high-density synaptic core. Herein, 1) evaluation of novel differential mode ferroelectric field-effect transistor (DM-FeFET) bitcell on a crossbar array of 4 K devices; 2) validation of weighted sum operation on 28 nm DM-FeFET crossbar array; 3) bit density of 223Mb mm −2 , which is ≈2× improvement compared to conventional FeFET array; 4) 196 TOPS/W energy efficiency for VGG-8 network; and 5) superior bit error rate (BER) resilience showing ≈94% training and 88% inference accuracy with 1% BER are demonstrated.

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https://doi.org/10.1002/aisy.202200389檢視
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