摘要
Low-voltage lateral trench split gate tri-gate MOSFETs (SGT-MOSFET) in 4H-SiC are proposed, fabricated, and investigated in this paper, comparing their performance with that of planar gate MOSFETs (PG-MOSFET). The tri-gate MOSFET features top channels on the (0001) face and additional sidewall channels on the (11-20) face, resulting in an increased effective channel width and higher electron mobility. The SGT-MOSFET exhibits drain currents 2.7 and 2.6 times higher than the PG-MOSFET at 25 °C and 200 °C, respectively. The gate oxide reliability is also examined preliminarily. These results highlight the potential of 4H-SiC tri-gate MOSFETs for low-voltage logic circuits and provide a basis for subsequent monolithic integration.