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Deposition of conductive Ru and RuO2 thin films employing a pyrazolate complex [Ru(CO)3(3,5-(CF3) 2-pz)]2 as the CVD source reagent
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Deposition of conductive Ru and RuO2 thin films employing a pyrazolate complex [Ru(CO)3(3,5-(CF3) 2-pz)]2 as the CVD source reagent

Yi-Hwa Song, Yao-Lun Chen, Yun Chi, Chao-Shiuan Liu, Wei-Li Ching, Ji-Jung Kai, Reui-San Chen, Ying-Sheng HuangArthur J. Carty
Chemical Vapor Deposition, 卷.9(3), 頁碼.162-169
06/2003

摘要

Carbonyl Pyrazolate RuO2 Ruthenium Thin film
The reaction of Ru 3 (CO) 12 with three equivalent of 3,5-bis(trifluoromethyl) pyrazole [(3,5-(CF 3 )2-pz)H] at 180°C produces the double pyrazolate-bridged ruthenium complex [Ru(CO) 3 (3,5-(CF 3 ) 2 -pz)] 2 , (1), in high yield. This ruthenium complex has been characterized by spectroscopic methods, revealing a molecular structure similar to that of the diosmium analogue [Os(CO) 3 (3.5-(CF 3 ) 2 -pz)] 2 - Thermogravimetric analysis (TGA) of complex 1 showed an enhanced volatility compared to the parent carbonyl compound Ru 3 (CO) 12 and the closely related, unsaturated 3,5-di-tert-butyl pyrazole complex (2) [Ru 2 (CO) 5 (3,5-t-Bu 2 -pz) 2 ]. Using complex 1 as the CVD source reagent, ruthenium metal with a preferred (002) orientation can be deposited at 400°C using H 2 as the carrier gas. If, however, O 2 is used as the carrier gas, RuO 2 thin films with a (101) orientation are obtained. The as-deposited metal thin films were characterized by various surface techniques, as well as by electrical resistivity measurements.

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