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Deposition of iridium thin films using new IrI CVD precursors
Journal article   Peer reviewed

Deposition of iridium thin films using new IrI CVD precursors

Yao-Lun Chen, Chao-Shiuan Liu, Yun Chi, Arthur J. Carty, Shie-Ming Peng and Gene-Hsiang Lee
Advanced Materials, Vol.14(2), pp.17-20
16/01/2002

Abstract

Communication: The syntheses of three volatile Ir I cyclooctadiene precursors is described. The anionic ligand was carefully selected to produce a structure (see Figure) with physical properties suitable for CVD requirements. Films grown using oxygen as carrier gas produced iridium thin films with a purity higher than 98% and a measured resistivity in the range of 8.4 to 10.2 μΩcm.

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