Abstract
With use of Sn(SiMe 3 ) 4 as the precursor, amorphous SiC 1-x thin films with Sn nanoparticles embedded were grown on Si substrates at 923 K by low-pressure chemical vapor deposition. After treatment under hydrogen plasma at 923 K, the Sn nanoparticles in the films were removed by an HF solution and by evaporation at 1423 K. Following the removal of Sn, high-temperature treatments at 1273-1423 K converted the amorphous thin films into mesoporous semiconducting β-SiC thin films with pore sizes 10-100 nm. © 2007 American Chemical Society.