Abstract
Charge-pumping (CP) technique is proposed to simultaneously measure the border traps and interface-trap density (D it ). The charge pumped per cycle (Q cp ) versus high level (V h ) of gate pulse for various frequencies was used to observe the behavior of the bulk traps close to the interface as a function of the CP frequency. Evolution on Q cp as a function of frequency was successfully used to determine the depth profile of border-trap density near the high-κ gate dielectric/Si interface. The influence of border trap in high-κ dielectric on the D it measurement can be prevented by an appropriate selection of gate frequency in CP technique. © 2006 IEEE.