摘要
This work presents a dual-axis electromagnetically-driven piezoresistively sensed scanning mirror fabricated in a 0.35-&null CMOS (complementary metal oxide semiconductor) process. The fabricated structure is 60 &null thick and contains a 3-mm diameter mirror. The drive coil consists of two CMOS metal layers, and the piezoresistive sensors are implemented using n-well and polysilicon resistors for comparison. The measured optical angles for vertical and horizontal scans were 19.1&null and 37.7&null at 0.418 and 1.205 kHz, respectively. This design exhibited good drive efficiency with corresponding drive currents of 3.7 and 24.9 mA<sub>pp</sub>, respectively.