摘要
A top-down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi-supporting layers to realize large-scale transfer processes on transition metal dichalcogenide materials. A 2-inch MoS 2 thin film transferred on SiO 2 /Si substrates with high integrity and a yield of ≈99% can be successfully achieved via the proposed process. MoS 2 -based transistors with a transferred Au thin film as the contact electrode indicate a lower contact resistance of 8.4 kΩ with improved mobility and a higher on/off ratio compared with that of the MoS 2 -based transistors with the evaporated Au thin film as the contact electrode. By applying the difference in adhesion force between metal oxides and metal on MoS 2 and PMMA surfaces, the selective transfer of MoS 2 films can be demonstrated. Furthermore, all-transferred MoS 2 -based transistor arrays are demonstrated by combining the selectively transferred MoS 2 film as the channel material and the transferred Au thin films as the contact electrode, which results in uniform electrical properties featuring a carrier mobility of 10.45 cm 2 V −1 s −1 , a subthreshold swing of 203.94 mV dec −1 , a normalized I on of 8.3 μA μm −1 , and an on/off ratio of 10 5 .