摘要
This paper presents a monolithic microwave integrated circuit Doherty power amplifier (DPA) operating at sub-6 GHz for 5G communication applications by a 0.25-μm gallium nitride high-electron mobility transistor process. A compact impedance inverter and output matching of the DPA are achieved using a transmission line network and shunt capacitors. Also, the size ratio of power cells in the main and auxiliary amplifiers is optimized for a high efficiency at output power backoff (OPBO). The measured peak output power (P <sub>out</sub> ) and the 1-dB compression point (P <sub>1 dB</sub> ) are 38.7 and 32.1 dBm, respectively, at 5.9 GHz. The power-added efficiency at 6-dB OPBO is up to 49.5%. Without digital predistortion (DPD), the DPA can deliver an average P <sub>out</sub> of 23.5 dBm with error vector magnitude (EVM) <-28 dB and 21.5 dBm with EVM <-32 dB for 64-quadrature amplitude modulation (QAM) and 256-QAM signals, respectively. The measured X-parameters are employed to further investigate the DPA nonlinear characteristics and verify the accuracy of conventionally used power amplifier characterization/measurement methods for system-level design and testing applications. The simulated results based on the X-parameters also indicate that the average output power can be enhanced up to 25.7 dBm with DPD for 256-QAM.