Design on Formation of Nickel Silicide by a Low-Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T-SRAM on a Wafer-Scale Flexible Substrate

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Design on Formation of Nickel Silicide by a Low-Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T-SRAM on a Wafer-Scale Flexible Substrate

Advanced Electronic Materials, 卷.9(12)

2023

DOI: https://doi.org/10.1002/aelm.202300353

摘要

6T-SRAM;CMOS inverter;flexible device;nickel silicide;pulsed-laser annealing

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https://doi.org/10.1002/aelm.202300353檢視

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題名: Design on Formation of Nickel Silicide by a Low-Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T-SRAM on a Wafer-Scale Flexible Substrate
創作者：: 郁倫闕 (作者)
學術資源類型: 期刊文章
出版日期: 2023
出版資訊: Advanced Electronic Materials, 卷.9(12)
語言: 英語