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Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors
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Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

Byung Hwan Chu, C.Y. Chang, Kevin Kroll, Nancy Denslow, Yu-Lin Wang, S.J. Pearton, Jenshan Lin, A.M. Dabiran, A.M. Wowchak, B. Cui, …
Physica Status Solidi (C) Current Topics in Solid State Physics, 卷.8(7-8), 頁碼.2486-2488
07/2011
DOI: https://doi.org/10.1002/pssc.201001171

摘要

Endocrine disruptor GaN HEMT Vitellogenin Condensed Matter Physics
Real time detection of vitellogenin in largemouth bass serum was demonstrated using AlGaN/GaN HEMTs. Anti-vitellogenin antibodies were chemically anchored to the gold-coated gate area of the HEMT by thioglycolic acid. The potential difference that occurred from the vitellogenin antigen/antibody interaction induced a drain current change. The sensor was able to detect as low as 4 μg/mL Vtg. Successful detection in serum samples shows that HEMTs have the potential to be used as biological sensors in real-world applications. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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