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Development of EUV interference lithography for 25 nm line/space patterns
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Development of EUV interference lithography for 25 nm line/space patterns

A.K. Sahoo, P.-H. Chen, C.-H. Lin, R.-S. Liu, B.-J. Lin, T.-S. Kao, P.-W. Chiu, T.-P. Huang, W.-Y. Lai, J. Wang, …
Micro and Nano Engineering, 卷.20, 100215
09/2023
DOI: https://doi.org/10.1016/j.mne.2023.100215

摘要

EUV interference lithography Half-pitch (HP) Hydrogen silsesquioxane (HSQ) Line/space patterns Slits (SL) Transmission grating mask Electronic Optical and Magnetic Materials Atomic and Molecular Physics and Optics Condensed Matter Physics Surfaces Coatings and Films Electrical and Electronic Engineering
In this study, we present the performance of an extreme ultraviolet interference lithography (EUV-IL) setup that was reconstructed at Taiwan Light Source 21B2 EUV beamline in the National Synchrotron Radiation Research Center (NSRRC), Taiwan. An easy-to-perform fabrication method to produce a high-quality transmission grating mask and a simple design of experimental setup for EUV-IL were developed. The current EUV-IL setup is capable of fabricating line/space patterns down to 25 nm half-pitch in hydrogen silsesquioxane (HSQ) resist. Preliminary exposure results revealed that optimized slit width and exposure time significantly improved line/space pattern quality. The current EUV-IL tool at NSRRC can be used for nano-patterning and resist screening to advance the next generation of semiconductor devices.

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