摘要
Singe-Electron Transistor (SET) is considered as a promising candidate of low-power devices for replacement or co-existence with Complementary Metal-Oxide-Semiconductor (CMOS) transistors/circuits. In this work, we propose a diagnosis approach for SET array under a more generalized defect model. With the more generalized defect model, the diagnosis approach will become more practical but complicated. We conducted experiments on a set of SET arrays with different dimensions and defect rates. The experimental results show that our approach only has 3.8% false-negative rate and 0.7% misjudged-category rate on average without reporting any false-positive edge when the defect rate is 4%. Therefore, the proposed diagnosis approach can diagnose the defective SET arrays and elevate the reliability of the SET arrays in the synthesis flow.